Samsung 2006 Annual Report Download - page 20
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B I G +S M A L L
More memory with greater efficiency: The small human brain possesses
an unlimited world of creativity. We continue to advance our technology to
store more data in less space. These efforts are changing the world
at a dizzying pace.
40nm 32Gb NAND Flash Memory
When circuit density drops below 50
nanometers, noise among transistors
will cause operational errors.
We have solved the problem with
our revolutionary charge trap flash (CTF)
architecture, which stores the electric
charge in a non-conductive layer of
flash memory. With 40nm processing
technology, we have opened a new
chapter in the history of semiconductor
manufacture.