Samsung 2000 Annual Report Download - page 38

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0.13-mi
38
In 2000, we marked our 8th consecutive year at the
top of the memory business, capturing 21% of the
DRAM and the SRAM markets. Among the year’s key
developments were a 0.12-micron 512Mb SDR/DDR
DRAM, 128MB SmartMedia™flash memory card, 500-
Mbps 128M DDR SDRAM, 0.17-micron 288Mb RDRAM,
0.15-micron 512Mb NAND flash memory, and 0.10-
micron process technology that’ll pave the way for
Memory Breaks 1 GHz
Our new 0.17-micron technology
has boosted the speed of our
third-generation RDRAM memory
chips by over 30% from 800 MHz
to 1,066 MHz as well as increased
per-wafer yields by 25%.