Samsung 2000 Annual Report Download - page 37

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37
In 2001, we’ll continue to push our fabrication process
technology below the 0.10-micron level and add 12-inch
fabrication technology as we aim for significant new
economies of scale. Our continuous pursuit of higher-
capacity, higher-margin memory products will keep us
comfortably No. 1 in this area. In particular, a strategic
alliance with Intel will provide us with the funding for
necessary testing and validation equipment that will
help us boost output of third-generation 128Mb RDRAM
to 10 million chips monthly in early 2001 and 20 million
in the second half of the year, giving us a market share
of over 50% in this high-performance memory area.
During the year, we’ll continue our diversification
into non-memory semiconductor fields to reduce our
exposure to volatile memory markets. Focusing on the
system-on-chip, LCD driver IC, and smart card fields,
our system large-scale integration business will
concentrate on solid growth opportunities with existing
cash-cow as well as new high-margin products.
Hand-in-hand with ongoing work on larger, higher-
resolution TFT-LCDs, we’ll allocate more resources on
small and medium-size LCD development to meet
increasing demand for higher-quality displays for PDAs,
mobile phones, Internet appliances, and other portable
digital devices.