AMD 2002 Annual Report Download - page 244

electronic elements (active or passive) and/or means to make external electrical connections to such elements, but which excludes any means for a user to operate
the functions therein (e.g., buttons, switches, sensors).
“Silicon-Germanium Technology” or “SiGe Technology” shall mean semiconductor fabrication processes and design techniques incorporating silicon and
germanium layers, provided, however, “SiGe Technology” shall not include strained silicon channel MOSFET techniques carried out on SOI Wafers.
“Silicon-On-Insulator Wafer” or “SOI Wafer” shall mean a, single-crystal silicon wafer bearing a horizontally-disposed isolating silicon dioxide (SiO 2) layer, in
turn bearing a single-crystal silicon layer or a polysilicon layer, which is separated from the underlying silicon by the silicon dioxide layer and in which one or
more active or passive integrated circuit structures are formed.
“SOI Device Information” means Background Know-How and Specific Results pertaining to all process methods, steps, and structures created on commercially
available SOI Wafers other than Bulk CMOS Information.
“SOI Integrated Circuit” shall mean an Integrated Circuit fabricated utilizing SOI Device Information and built on SOI Wafers.
“Specific Results” shall mean information and items, other than i) Proprietary Tools, ii) Packaging Technology, iii) Mask Fabrication and Photoresist
Technology, iv) Memory, v) SiGe Technology, and vi) Chip Designs, developed and/or contributed to the Process Development Projects by the Parties pursuant
to the development work of the Process Development Projects as follows:
The documentation produced for the Process Development Projects as set forth in Exhibit J attached hereto (“Documentation”);
All information and items resulting from the Process Development Projects, including but not limited to methods, techniques, unit processes, process
flows, structures in silicon, test software, and specifications for equipment, chemicals, masks and consumables;
Any Background Know-How provided to the Process Development Project(s) by a Party pursuant to Section 3, below.
“Subsidiary” means a corporation, company or other entity:
(a) more than fifty percent (50%) of whose outstanding shares or securities (representing the right to vote for the election of directors or other managing
authority) are, now or hereafter, owned or controlled, directly or indirectly, by a Party hereto, or
(b) which does not have outstanding shares or securities, as may be the case in a partnership, joint venture or unincorporated association, but more than
fifty percent (50%) of whose ownership interest representing the right to make the decisions for such corporation, company or other entity is now or
hereafter, owned or controlled, directly or indirectly, by a Party hereto,
Source: ADVANCED MICRO DEVIC, 10-K, March 14, 2003