AMD 2002 Annual Report Download - page 241

“CMOS 10S” means a *** micron CMOS logic fabrication process currently under development by IBM, the development of which is to be continued pursuant
to this Agreement, for the fabrication of SOI Integrated Circuits, as further defined in Exhibit A.1, attached hereto.
“CMOS 10S2” means a *** micron CMOS logic fabrication process currently under development by IBM, the development of which is to be continued pursuant
to this Agreement, which is a performance enhanced version of CMOS 10S, as further defined in Exhibit A.2.
“CMOS 11S” means a *** micron CMOS logic fabrication process currently under development by IBM, the development of which is to be continued pursuant
to this Agreement, for the fabrication of SOI Integrated Circuits, as further defined in Exhibit A.3.
“CMOS 11S2” means a *** micron CMOS logic fabrication process currently under development by IBM, the development of which is to be continued pursuant
to this Agreement, which is a performance enhanced version of CMOS 11S, as further defined in Exhibit A.4.
“CMOS 12S” means a *** micron CMOS logic fabrication process currently under development by IBM, the development of which is to be continued pursuant
to this Agreement, for the fabrication of SOI Integrated Circuits, as further defined in Exhibit A.5.
“Designated Invention” means an Invention for which a patent application has been filed by one or more of the Parties pursuant to Sections 11.1 or 11.2.
“Derivative Process(es)” shall have the meaning ascribed to it in Section 8.1
“Embedded DRAM” or “eDRAM” shall mean a device that either (i) primarily carries out logic functions, and includes one or more dynamic random access
memory (DRAM) cells embedded within logic circuitry on the same semiconductor substrate, or (ii) primarily carries out memory functions, and includes one or
more DRAM cells in combination with a static random access memory (SRAM) array on the same semiconductor substrate (including an array of SRAM cells
linked with bit lines, word lines, sense amplifiers and decoders).
“Foundry Product” shall mean an SOI Integrated Circuit wherein all the following conditions are met: (i) the ***, or *** and/or ***, for such SOI Integrated
Circuit product ***; (ii) *** of such product; and (iii) *** is contractually bound to ***.
“IBM Project Leader” means the individual appointed by IBM pursuant to Section 4.2, below, to provide day-to-day oversight for the Process Development
Projects.
“Integrated Circuit” means an integral unit formed on a semiconductor substrate including a plurality of active and/or passive circuit elements formed at least in
part of semiconductor material. For clarity, “Integrated Circuit” shall include charge-coupled devices (“CCDs”).
*** Confidential information omitted and filed separately with the Securities and Exchange Commission.
Source: ADVANCED MICRO DEVIC, 10-K, March 14, 2003