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Research and Development Strategies
34 Seiko Epson Corporation
R&D Expenditure
For the fiscal year ended March 31, 2007, R&D expenditure
registered a year-on-year decline of ¥8.2 billion (8.9%), to
¥84.7 billion. The ratio of R&D expenditure to net sales
was 6.0%, unchanged from the previous fiscal year. By
segment, R&D expenditure was ¥33.7 billion for
information-related equipment, ¥14.6 billion for
electronic devices, and ¥2.4 billion for precision
products. An additional ¥34.0 billion was spent in other
business areas and for corporate R&D in a broad range
of businesses to be developed over the medium- to
long-term. Epson will continue to spend about 6% of
net sales on R&D that will support the development of
new business domains and product lines to ensure
long-term growth.
R&D Topics for Fiscal Year Ended
March 31, 2007
Epson Succeeds in Forming High-Quality Silicon
Film Using Micro-Liquid Processes—a World First
Epson, in partnership with JSR Corporation, succeeded
in creating the world’s first* high-quality silicon film by
applying liquid coating and inkjet patterning processes.
Today, demand for TFTs for use in displays is rising
thanks to surging demand for LCD TVs and related
products. However, current manufacturing methods are
costly and pose environmental problems due to the use
of massive vacuum devices for film formation. Liquid
materials reduce costs by eliminating the need for
vacuum systems, and the use of inkjet and other
printing technologies for pattern formation can
conserve energy and shorten processing time. As
Epson explores possible applications for this
technology, it will redouble its R&D efforts with the goal
of making the technology commercially viable.
*According to Epson research (as of April 2006)
In addition to creating attractive products, strengthening existing businesses, and cultivating
new business domains that will support long-term growth, Epson’s R&D program looks to
develop next-generation products by honing the Company’s core technical strengths in
products with low power consumption, compact design and which provide high image quality.
Gate electrodeGate electrod
Source electrodeSource electrode
Drain electrode
Drain electro
10
10μμmm
Gate electrode
Source electrode
Drain electrode
Polysilicon film
(formed using inkjet technology)
Enlarged Photograph of a Fabricated TFT
10μm
2002 2003 2005 2006 20072004
84.7
79.7
85.8 90.5 92.9
89.0
R&D Expenditure (Billions of yen)
Years ended March 31
R&D Expenditure by Segment
Year ended March 31, 2007
Information-Related
Equipment 40%
Electronic Devices 17%
Precision Products 3%
Others and Corporate
R&D Expenditure 40%